DMS3019SSD
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
?
DIOFET utilize a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
? Low R DS(on) – minimizes conduction loss
? Low V SD – reducing the losses due to body diode
construction
?
?
?
?
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
?
Low Q rr – lower Q rr of the integrated Schottky reduces body
?
Weight: 0.072 grams (approximate)
diode switching losses
?
?
Low gate capacitance (Q g /Q gs ) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
Avalanche rugged – I AR and E AR rated
?
?
?
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Q1
D 1
Q2
D 2
D2
D2
G2
S2/D1
G1
S1
S2/D1
S2/D1
G 1
S 1
G 2
S 2
Top View
Top View
Internal Schematic
N-Channel MOSFET +
Integrated Schottky Diode
N-Channel MOSFET
Ordering Information (Note 3)
Notes:
Part Number
DMS3019SSD-13
1. No purposefully added lead.
Case
SO-8
Packaging
2500 / Tape & Reel
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Top View
8
5
Logo
S3019SD
Part no.
YY WW
Week: 01 ~ 53
Year: “09” = 2009
1
4
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
1 of 10
www.diodes.com
October 2010
? Diodes Incorporated
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